Короткий опис(реферат):
Issues of improving the properties of semiconductor thin film and their reproducibility, as well as improving
and reducing the cost of manufacturing technology stimulate research and development of new,
advanced methods. Therefore, it is important to optimize the technology of getting reproducible, competitive,
high-tech thin films of multicomponent semiconductor compounds with predetermined properties. In
the given article it is shown that constructive and technological improvements of a method of thermal spraying
in vacuum allow to minimize nonequilibrium conditions of film growth, keeping the advantages of thermovacuum
spraying, such as high reproducibility, processability and productivity, a wide range of variations
in the synthesis conditions, and, accordingly, the properties of condensates, maximum purity of growth
processes, as well as ease of performing and management and cost-effectiveness of the process of getting
perfect condensates. For this purpose, we have developed a special construction of a quasi-fusion evaporator
and a device for getting semiconductor film in vacuum, as well as a version of a transparent “hot wall”.
The resistivity, cross section and geometric dimensions of the cover and the heater of the developed structures
were selected so that in the mode of resistive heating of the evaporator temperature gradient due to
the difference in their electrical resistance, and, accordingly, the Joule heat of current, in the temperature
range 673… 1473 K provided the temperature of the cover 1.1 ... 1.3 times higher than the temperature of
the heater. Due to the elevated temperature of the cover, the solid fraction is either repelled on the sublimating
(evaporating) surface and the walls of the crucible, or undergoes sublimation (evaporation) from the
surface of the cover. Depending on the values of the sputtering rate, the grain size of semiconductor polycrystalline
film varied from units of nanometers to several micrometers. Crystallinely ordered films were got
at relatively low values of the sputtering rate (0.5...5 nmꞏs-1). It was set up the technological conditions for
getting thin films of multicomponent semiconductors, which ensure the independence of the chemical composition
of condensates from the evaporation rate in the wide range from 0.05 to 20 nmꞏs-1, uniform composition
of the gas phase during sublimation, absence of inhomogeneous solids in films, wide range properties
of condensates and their high reproducibility.
